HLDD2N60 201 7 . h1.0 page 1 www.hldic.com marking and pin assignment n - channel mosfet n- channel enhancement mode power mosfet description the HLDD2N60 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of a pplications. application power switchingapplication hard switched and high frequencycircuits uninterruptible powersupply features vds = 600v,id =2a rds(on) 5@vgs=10v low g atecharge. green d eviceavailable. a dvancedhighcelldenitytrenchtechnologyforultrards(on). e x c ellentpackageforgoodheatdissipation. absolute maximum ratings (t c =25 drain - source voltage v ds 600 v gate - source voltage v gs 30 v drain current - continuous i d 2 a drain current - continuous(t c =100 ) i d (100 ) 1.3 a pulsed drain current i dm 6 a maximum power dissipation p d 130 w derating factor 0.43 w/ single pulse avalanche energy (note 5) e as 120 mj operating junction and storage temperature range t j ,t stg - 55 to 175 thermal characteristic thermal resistance,junction -to - case (note 2) r jc 0.43 /w
HLDD2N60 2017 . h1.0 page 2 www.hldic.com package marking and ordering information part no. marking package HLDD2N60 HLDD2N60 to -252 electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain - source breakdown voltage bv dss v gs =0v i d =250a 600 - - v zero gate voltage drain current i dss v ds =600v,v gs =0v - - 10 a gate - body leakage current i gss v gs =30v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2 - 4 v drain - source on- state resistance r ds(on) v gs =10v, i d =1a - 3.8 5 ? v gs =4.5v, i d =0a - - forward transconductance g fs v ds =40v,i d =1a - 2.5 - s dynamic characteristics (note4) input capacitance c lss v ds = 25v,v gs =0v , f=1.0mhz - 380 490 pf output capacitance c oss - 35 46 pf reverse transfer capacitance c rss - 7.6 9.9 pf switching characteristics (note 4) turn - on delay time t d(on) v dd = 300v,i d =2a, r g =2.5? - 16 40 ns turn - on rise time t r - 50 110 ns turn - off delay time t d(off) - 40 90 ns turn - off fall time t f - 40 90 ns total gate charge q g v ds =480v,i d = 2a , v gs = 10v - 15.3 nc gate - source charge q gs - 1.8 nc gate - drain charge q gd - 7.2 nc drain - source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =2a - - v diode forward current (note 2) i s - - 2 a reverse recovery time t rr vgs=0v,is=2a dif/dt=100a/us - 250 - ns reverse recovery charge qrr - 1.31 - nc forward turn - on time t on intrinsic turn - on time is negligible (turn- on is dominated by ls+ld) notes: 1pulse width limited by maximum junctiontemperature 2l=55mh, ibasb=2.0a, vbddb=50v, rbgb=25 ,startingtbjb=25 3ibsdb 2a,di/dt 300a/s,vddbvbdssb, starting tbjb=25 4pulse testpulse width 300s,duty cycle2 5essentially independent of operating temperature
HLDD2N60 2017 . h1.0 page 3 www.hldic.com electrical characteristics (curves) 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 ] i d [a v ds [v] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 not e t j =25 v gs =10v v gs =20v r ds(on) [ ] i d [a] electrical characteristics (curves) transfer characteristics on -resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics on-region characteristics 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] ] v gs gate sou rce voltage[v 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v s d [v] i dr [a]
HLDD2N60 2017 . h1.0 page 4 www.hldic.com -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250a bv dss (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 n o es 1 . v gs =10v 2 . i d a =1.0 r ds(on) (normalized) t j [ ] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ] i d drain current [a t c case temperature [ ] breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs2n60v/r/c maximum drain current vs. case temperature maximum safe operating area for jcs2n60f
HLDD2N60 2017 . h1.0 page 5 www.hldic.com electrical characteristics (curves) transient thermal response curve for jcs2n60c transient thermal response curve for jcs2n60f transient thermal response curve for jcs2n60v/r
HLDD2N60 2017 . h1.0 page 6 www.hldic.com to - 252 package information
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